Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy
<p>InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high electron mobility transistors (HEMTs). However, the quality of InAlN remains relatively poor with basic material and structural c...
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2015
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| Online Access: | http://hdl.handle.net/10161/11323 |