SiC Growth by Laser CVD and Process Analysis
The goal of this research is to investigate how to deposit SiC material from methyltrichlorosilane (MTS) and H2 using the LCVD technique. Two geometries were targeted, fiber and line. In order to eliminate the volcano effect for LCVD-SiC deposition, a thermodynamics model was developed to check the...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2006
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| Online Access: | http://hdl.handle.net/1853/10510 |