Quantum Mechanical Effects on MOSFET Scaling
This thesis describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. An explicit expression of gate direct tunneling for thin gate oxides has been developed by solving the Schroinger equ...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | en_US |
| Published: |
Georgia Institute of Technology
2006
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1853/11580 |