The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaO₂) substrates

The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaO₂) substrates

Bibliographic Details
Main Author: Kang, Sangbeom
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2007
Subjects:
Compound semiconductors Design and construction
Epitaxial growth
Gallium nitride
Modulation-doped field-effect transistors
Online Access:http://hdl.handle.net/1853/13903

Internet

http://hdl.handle.net/1853/13903

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