Low-Frequency Noise in SiGe HBTs and Lateral BJTs

Low-Frequency Noise in SiGe HBTs and Lateral BJTs

The object of this thesis is to explore the low-frequency noise (LFN) in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and lateral bipolar junction transistors (BJTs). The LFN of SiGe HBTs and lateral BJTs not only determines the lowest detectable signal limit but also induces p...

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Bibliographic Details
Main Author: Zhao, Enhai
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2007
Subjects:
Interfacial oxide
Lateral BJT
SiGe HBTs
Low-frequency noise
Bipolar transistors Design
Online Access:http://hdl.handle.net/1853/14098

Internet

http://hdl.handle.net/1853/14098

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