SiGe HBTs Operating at Deep Cryogenic temperatures
As Si-manufacturing compatible SiGe HBTs are making rapid in-roads into RF through mm-wave circuit applications, with performance levels steadily marching upward, the use of these devices under extreme environment conditions are being studied extensively. In this work, test structures of SiGe HBTs w...
| Main Author: | |
|---|---|
| Published: |
Georgia Institute of Technology
2007
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1853/14609 |