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Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon

Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon

Bibliographic Details
Main Author: Doolittle, William Alan
Published: Georgia Institute of Technology 2007
Subjects:
Silicon defects
Semiconductors Defects
Online Access:http://hdl.handle.net/1853/15710
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Internet

http://hdl.handle.net/1853/15710

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