Improved understanding and control of Mg-doped GaN by plasma assisted molecular beam epitaxy
By an improved understanding of Mg-doped GaN through an exhaustive review of current limitations, increased control over the material was achieved by addressing several of these issues. To address the issues of the memory effect, low sticking coefficient and high vapor pressure of Mg, a new Mg dopa...
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Georgia Institute of Technology
2007
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| Online Access: | http://hdl.handle.net/1853/16228 |