Analysis and Design of Low-Noise Amplifiers in Silicon-Germanium Hetrojunction Bipolar Technology for Radar and Communication Systems
This thesis presents an overview of the simulation, design, and measurement of state-of-the-art Silicon-Germanium Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In...
| Main Author: | |
|---|---|
| Published: |
Georgia Institute of Technology
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1853/19755 |