Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications

Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications

The objective of proposed research is to investigate the potential of strained silicon and silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely strained buried channel modulation doped field effect transistor (MODFET) and silicon-on-insulator (...

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Bibliographic Details
Main Author: Madan, Anuj
Published: Georgia Institute of Technology 2008
Subjects:
RF
Mixed-signal
Silicon germanium
CMOS
Strained silicon
MODFET
SiGe
SOI
Field-effect transistors
Modulation-doped field-effect transistors
Germanium
Silicon
Extreme environments
Online Access:http://hdl.handle.net/1853/24758

Internet

http://hdl.handle.net/1853/24758

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