Madan, A. (2008). Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications. Georgia Institute of Technology.
Chicago Style (17th ed.) CitationMadan, Anuj. Physical Understanding of Strained-silicon and Silicon-germanium FETs for RF and Mixed-signal Applications. Georgia Institute of Technology, 2008.
MLA (8th ed.) CitationMadan, Anuj. Physical Understanding of Strained-silicon and Silicon-germanium FETs for RF and Mixed-signal Applications. Georgia Institute of Technology, 2008.
Warning: These citations may not always be 100% accurate.