Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications
This dissertation shows the properties of lithium niobate and lithium tantalate as a promising substrate for III-nitrides, addresses several problems of integrating compound semiconductor materials on LN and LT. It also suggests some solutions of the addressed problems, including furnace anneals at...
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Georgia Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1853/28209 |