Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices

Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices

The effect of hot phonons and the influence of macroscopic polarization-induced built-in fields on the performance of III-V nitride devices are investigated. Self-heating due to hot phonons is analyzed in AlGaN/GaN high electron mobility transistors (HEMTs). Thermal transport by acoustic phonons in...

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Bibliographic Details
Main Author: Venkatachalam, Anusha
Published: Georgia Institute of Technology 2009
Subjects:
High electron mobility transistors
Nitrides
InGaN-based green lasers
Polarization
Self-heating
Quantum wells
Transition metal nitrides
Semiconductors Materials
Phonons
Modulation-doped field-effect transistors
Semiconductor lasers
Online Access:http://hdl.handle.net/1853/29669

Internet

http://hdl.handle.net/1853/29669

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