Multiscale modeling of thermal transport in gallium nitride microelectronics

Multiscale modeling of thermal transport in gallium nitride microelectronics

Gallium nitride (GaN) has been targeted for use in high power (>30 W/mm) and high frequency (>160 GHz) application due to its wide band gap and its large break down field. One of the most significant advances in GaN devices has evolved from the AlGaN/GaN high electron mobility transistor (HEM...

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Bibliographic Details
Main Author: Christensen, Adam Paul
Published: Georgia Institute of Technology 2010
Subjects:
Phonon transport
Lattice-Boltzmann method
Multiscale thermal modeling
Boltzmann transport equation
Phonon relaxation times
Phonon lifetimes
Gallium nitride
Microelectronics
Heat Transmission
Modulation-doped field-effect transistors
Online Access:http://hdl.handle.net/1853/31681

Internet

http://hdl.handle.net/1853/31681

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