Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization

Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization

The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate t...

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Bibliographic Details
Main Author: Yuan, Jiahui
Published: Georgia Institute of Technology 2010
Subjects:
Heterojunction bipolar transistor
SiGe HBT
Terahertz speed
Cryogenic electronics
Silicon germanium
Bipolar transistors
Heterojunctions
Cryoelectronics
Low temperature engineering
Online Access:http://hdl.handle.net/1853/33837

Internet

http://hdl.handle.net/1853/33837

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