Reliability of SiGe HBTs for extreme environment and RF applications
The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for t...
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Georgia Institute of Technology
2012
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| Online Access: | http://hdl.handle.net/1853/42836 |