Using complementary silicon-germanium transistors for design of high-performance rf front-ends

Using complementary silicon-germanium transistors for design of high-performance rf front-ends

The objective of the research presented in this dissertation is to explore the achievable dynamic range limits in high-performance RF front-ends designed using SiGe HBTs, with a focus on complementary (npn + pnp) SiGe technologies. The performance requirements of RF front-ends are high gain, high li...

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Bibliographic Details
Main Author: Seth, Sachin
Published: Georgia Institute of Technology 2012
Subjects:
Distortion
RF circuit design
SiGe HBT
Transistors
Radio Transmitter-receivers
Radio frequency integrated circuits
Bipolar transistors
Silicon alloys
Germanium
Online Access:http://hdl.handle.net/1853/44721

Internet

http://hdl.handle.net/1853/44721

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