Design and fabrication of boron-containing III-nitrides based high electron mobility transistors

Design and fabrication of boron-containing III-nitrides based high electron mobility transistors

GaN-based HEMTs are among the most promising candidates for high-power and high-frequency applications; a niche for millimeter-wave technologies. Nitride materials indeed outperform other mainstream III-V materials (InP or GaAs) because of several properties, including wider bandgaps, high peak and...

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Bibliographic Details
Main Author: Ravindran, Vinod
Published: Georgia Institute of Technology 2013
Subjects:
Boron
HEMT
Simulation
Semiconductors
Transistors
Electron mobility
Nitrides
Modulation-doped field-effect transistors
Millimeter waves
Online Access:http://hdl.handle.net/1853/47606

Internet

http://hdl.handle.net/1853/47606

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