Design and fabrication of boron-containing III-nitrides based high electron mobility transistors
GaN-based HEMTs are among the most promising candidates for high-power and high-frequency applications; a niche for millimeter-wave technologies. Nitride materials indeed outperform other mainstream III-V materials (InP or GaAs) because of several properties, including wider bandgaps, high peak and...
Main Author: | Ravindran, Vinod |
---|---|
Published: |
Georgia Institute of Technology
2013
|
Subjects: | |
Online Access: | http://hdl.handle.net/1853/47606 |
Similar Items
-
Investigations of hexagonal boron nitride as a semiconductor for neutron detection
by: Yazbeck, Joseph
Published: (2012) -
Impact of Bi Doping into Boron Nitride Nanosheets on Electronic and Optical Properties Using Theoretical Calculations and Experiments
by: Muhammad Ikram, et al.
Published: (2021-05-01) -
Technology for boron-doped layers formation on the diamond
by: Zyablyuk K. N., et al.
Published: (2012-10-01) -
Topochemical reactions of boron nitride
by: Korinek, George Jiri
Published: (2012) -
Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS
by: Schulte, Donald W.
Published: (2013)