Study of III-nitride growth kinetics by molecular-beam epitaxy
Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emit...
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Georgia Institute of Technology
2013
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| Online Access: | http://hdl.handle.net/1853/47641 |