Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition

Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition

The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures grown on sapphire with different p-InxGa1-xN base-region compositions, xIn = 0.03 and 0.05, are presented in a comparative stud...

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Bibliographic Details
Main Author: Lochner, Zachary M.
Other Authors: Dupuis, Russell D.
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2013
Subjects:
Metalorganic chemical vapor deposition
Heterojunction bipolar transistor
III-nitrides
Gallium nitride
Ultraviolet laser diode
Chemical vapor deposition
Vapor-plating
Epitaxy
Semiconductors
Online Access:http://hdl.handle.net/1853/49032

Internet

http://hdl.handle.net/1853/49032

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