Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods
The development of state-of-the-art AlGaN/GaN high electron mobility transistors (HEMTs) has shown much promise for advancing future RF and microwave communication systems. These revolutionary devices demonstrate great potential and superior performance and many commercial companies have demonstrate...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
Georgia Institute of Technology
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1853/49108 |