Thermomigrated Junction Isolation of Deep Reactive Ion Etched, Single Crystal Silicon Devices, and its Application to Inertial Navigation Systems
The introduction of deep reactive ion etching (DRIE) technology has greatly expanded the accessible design space for microscopic systems. Structures that are hundreds of micrometers tall with aspect ratios of 40:1, heretofore impossible, can now be achieved. However, this technology is primarily a...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1853/5120 |