Thermomigrated Junction Isolation of Deep Reactive Ion Etched, Single Crystal Silicon Devices, and its Application to Inertial Navigation Systems

• Main Author: Chung, Charles Choi
• Format: Others
• Language: en_US
• Published: Georgia Institute of Technology 2005
• Subjects: Deep reactive ion etching (DRIE); Inductively coupled
• Online Access: http://hdl.handle.net/1853/5120

The introduction of deep reactive ion etching (DRIE) technology has greatly expanded the accessible design space for microscopic systems. Structures that are hundreds of micrometers tall with aspect ratios of 40:1, heretofore impossible, can now be achieved. However, this technology is primarily a forming technology, sculpting structures from a substrate. This work seeks to complement deep reactive ion etching by developing an electrical isolation technology to enable electro-mechanical function in these new deep reactive ion etched structures. The objective of the research is twofold. The first is to develop and characterize an electrical isolation technology for DRIE, single crystal silicon (SCS) micro-electro-mechanical systems (MEMS) using temperature gradient zone melting (TGZM) of aluminum junctions for diodic isolation. The second is to demonstrate the utility of this electrical isolation technology in the design, simulation, fabrication, and testing of a MEMS device, i.e. a micro-gyroscope, in such a way that the benefits from junction isolated, deep reactive ion etched, single crystal silicon devices are preserved.