Electroplated multi-path compliant copper interconnects for flip-chip packages
The international technology roadmap for semiconductors (ITRS) 2012 report foresees the use of porous dielectric materials with a low dielectric constant in conjunction with copper interconnects as a way to reduce the resistive-capacitive (RC) delay in microelectronic applications. However, the intr...
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Format: | Others |
Language: | en_US |
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Georgia Institute of Technology
2014
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Online Access: | http://hdl.handle.net/1853/51800 |