Addressing thermal and environmental reliability in GaN based high electron mobility transistors

Addressing thermal and environmental reliability in GaN based high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) have appeared as attractive candidates for high power, high frequency, and high temperature operation at microwave frequencies. In particular, these devices are being considered for use in the area of high RF power for microwave and millimeter wav...

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Bibliographic Details
Main Author: Kim, Samuel H.
Other Authors: Graham, Samuel
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2014
Subjects:
Reliability
GaN
HEMTs
HFETs
Temperature
Environmental reliability
Negative gate bias step stress test
Raman thermometry
Atomic layer deposition (ALD) coating
Online Access:http://hdl.handle.net/1853/52244

Internet

http://hdl.handle.net/1853/52244

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