Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy
The objective of this research was to investigate the microscopic processes occurring at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy (MBE). In particular, efforts were made to characterize the dominant chemical and physical mechanisms that lead to anion exch...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1853/5279 |