Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors

Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors

The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements we...

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Bibliographic Details
Main Author: Lee, Yi-Che
Other Authors: Shen, Shyh-Chiang
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2015
Subjects:
III-nitride
Heterojunction
Bipolar transistor
Field-effect transistor
Fabrication process
Online Access:http://hdl.handle.net/1853/53472

Internet

http://hdl.handle.net/1853/53472

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