Analysis of defects and fault models in embedded spin transfer torque (STT) MRAM arrays
Spin transfer torque magnetic random access memory (STT-MRAM) is a competitive, future memory technology that has gained immense interest in recent years due to its small cell size, voltage and process compatibility with CMOS and nano-second read/write speeds. It exhibits high density (3-4x of SRAM)...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2016
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| Online Access: | http://hdl.handle.net/1853/55060 |