Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology

This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT BiCMOS technologies and the device physics of the SiGe HBT are discussed. The performance advantages of the SiGe HBT ov...

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Bibliographic Details
Main Author: Haugerud, Becca Mary
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2005
Subjects:
Online Access:http://hdl.handle.net/1853/6952