Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology
This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT BiCMOS technologies and the device physics of the SiGe HBT are discussed. The performance advantages of the SiGe HBT ov...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1853/6952 |