Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors
A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behin the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section o...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1853/7217 |