Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator
The objective of this research has been the study of device properties for emerging wide-bandgap cubic-phase semiconductors. Though the wide-bandgap semiconductors have great potential as high-power microwave devices, many gaps remain in the knowledge about their properties. The simulations in this...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2006
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| Online Access: | http://hdl.handle.net/1853/7500 |