Electron Spectroscopic Study of Indium Nitride Layers

Electron Spectroscopic Study of Indium Nitride Layers

Surface structure, chemical composition, bonding configuration, film polarity, and electronic properties of InN layers grown by high pressure chemical vapor deposition (HPCVD) have been investigated. Sputtering at an angle of 50-70 degrees followed by atomic hydrogen cleaning (AHC) was successful in...

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Bibliographic Details
Main Author: Bhatta, Rudra Prasad
Format: Others
Published: Digital Archive @ GSU 2008
Subjects:
Electron energy loss spectroscopy
Vibrational spectroscopy
Indium nitride
Nitride semiconductors
Surface structure composition
Surface electron accumulation
Hydrogen desorption
Astrophysics and Astronomy
Physics
Online Access:http://digitalarchive.gsu.edu/phy_astr_diss/23
http://digitalarchive.gsu.edu/cgi/viewcontent.cgi?article=1022&context=phy_astr_diss

Internet

http://digitalarchive.gsu.edu/phy_astr_diss/23
http://digitalarchive.gsu.edu/cgi/viewcontent.cgi?article=1022&context=phy_astr_diss

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