A study on high-k dielectrics for discrete charge-trapping flash memory applications
Discrete charge-trapping flash memories are more promising than their floating-gate counterparts due to their physically discrete-trapping and coupling-free nature. Si3N4 is conventional material as charge-trapping layer (CTL) for charge storage. The shortcomings of Si3N4 are its low dielectric con...
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| Language: | English |
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The University of Hong Kong (Pokfulam, Hong Kong)
2013
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| Online Access: | http://hdl.handle.net/10722/184251 |