Nanostructuring for nitride light-emitting diodes and opticalcavities
The group of III-V semiconductors is emerging as highly attractive materials for a wide range of applications, particularly the gallium nitride family of alloys. Undoubtedly, the development of nitride-based light-emitting diodes (LEDs) and laser diodes (LDs) represented a quantum leap in the advan...
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| Language: | English |
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The University of Hong Kong (Pokfulam, Hong Kong)
2013
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| Online Access: | http://hdl.handle.net/10722/184252 |