Nanostructuring for nitride light-emitting diodes and opticalcavities

The group of III-V semiconductors is emerging as highly attractive materials for a wide range of applications, particularly the gallium nitride family of alloys. Undoubtedly, the development of nitride-based light-emitting diodes (LEDs) and laser diodes (LDs) represented a quantum leap in the advan...

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Bibliographic Details
Main Authors: Li, Kwai-hei., 李攜曦.
Other Authors: Choi, HW
Language:English
Published: The University of Hong Kong (Pokfulam, Hong Kong) 2013
Subjects:
Online Access:http://hdl.handle.net/10722/184252

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