A study on the dielectrics of charge-trapping flash memory devices
Discrete charge-trapping flash memory is being developed for the next-generation commercial flash-memory applications due to its advantages over the traditional floating-gate counterpart. Currently, Si3N4 is widely used as charge-trapping layer (CTL). However, Si3N4 has low dielectric constant and s...
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| Language: | English |
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The University of Hong Kong (Pokfulam, Hong Kong)
2014
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| Online Access: | http://hdl.handle.net/10722/196488 |