Lambda Bipolar Transistor (LBT) in Static Random Access Memory Cell

Lambda Bipolar Transistor (LBT) in Static Random Access Memory Cell

With a view to reduce the number of components in a Static Random Access Memory (SRAM) cell, the feasibility of use of Lambda Bipolar Transistor (LBT)in the bistable element of the cell has been explored under the present study. The LBT under consideration here comprises of an enhancement mode MOSFE...

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Bibliographic Details
Main Author: Sarkar, Manju
Other Authors: Satyam, M
Format: Others
Language:en
Published: Indian Institute of Science 2005
Subjects:
Electrical Communications
Random access storage
MOSFET
Static Random Access Memory
Iambda Bipolar Transistor (LBT)
DC model
Sram Cell
Online Access:http://hdl.handle.net/2005/124

Internet

http://hdl.handle.net/2005/124

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