Device Structure And Material Exploration For Nanoscale Transistor

Device Structure And Material Exploration For Nanoscale Transistor

There is a compelling need to explore different material options as well as device structures to facilitate smooth transistor scaling for higher speed, higher density and lower power. The enormous potential of nanoelectronics, and nanotechnology in general, offers us the possibility of designing dev...

Full description

Bibliographic Details
Main Author: Majumdar, Kausik
Other Authors: Bhat, Navakanta
Language:en_US
Published: 2013
Subjects:
Nanoscale Transistor
Semiconductor Devices
Double-Gate Field Effect Transistor (DGFET)
Quantum Capacitance
Nanowire
HFinFET-Hybrid Transistor
Graphene Nanoribbon
Graphene Transistor
Negative Differential Conductance
Ballistic Nanowire Field Effect Transistor Model
Ballistic Nanowire FET Model
Graphene
Electronic Engineering
Online Access:http://etd.iisc.ernet.in/handle/2005/2097
http://etd.ncsi.iisc.ernet.in/abstracts/2698/G24984-Abs.pdf

Internet

http://etd.iisc.ernet.in/handle/2005/2097
http://etd.ncsi.iisc.ernet.in/abstracts/2698/G24984-Abs.pdf

Similar Items