Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization

Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization

Bibliographic Details
Main Author: Paul, Shashi
Other Authors: Shivashankar, S A
Language:en_US
Published: 2013
Subjects:
Aluminium-Gallium Arsenide
Semiconductors
Optoelectronics
Gallium Arsenide Semiconductors
Metalorganic Vapor Phase Epitaxy (MOVPE)
AlGaAs
GaAs
Electronic Engineering
Online Access:http://etd.iisc.ernet.in/handle/2005/2233
http://etd.ncsi.iisc.ernet.in/abstracts/2846/G14056-Abs.pdf

Internet

http://etd.iisc.ernet.in/handle/2005/2233
http://etd.ncsi.iisc.ernet.in/abstracts/2846/G14056-Abs.pdf

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