Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications
The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material for gate dielectric. Among the various high-K dielectrics that have been studied, HfO2 is found to be a p...
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| Language: | en_US |
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2013
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| Online Access: | http://etd.iisc.ernet.in/handle/2005/2241 http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf |