Compact Modeling Of Asymmetric/Independent Double Gate MOSFET
For the past 40 years, relentless focus on Moore’s Law transistor scaling has provided ever-increasing transistor performance and density. In order to continue the technology scaling beyond 22nm node, it is clear that conventional bulk-MOSFET needs to be replaced by new device architectures, most pr...
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| Language: | en_US |
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2014
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| Online Access: | http://etd.iisc.ernet.in/handle/2005/2346 http://etd.ncsi.iisc.ernet.in/abstracts/3017/G25480-Abs.pdf |