Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous growth methods were explored to achieve device quality epitaxial III-nitride semi...
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Language: | en_US |
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2016
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Online Access: | http://hdl.handle.net/2005/2514 http://etd.ncsi.iisc.ernet.in/abstracts/3262/G25531-Abs.pdf |