Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures

Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures

Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in...

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Bibliographic Details
Main Author: Madhavi, S
Other Authors: Venkataraman, V
Language:en_US
Published: Indian Institute of Science 2007
Subjects:
Heterostructures
Semiconductor Filing
Transport Theory
Silicon Thin Films - Electrical Properties
Silicon Systems - Transport Properties
Low Field Transport
High Field Transport
Transient Thermal Response
Two Dimensional Electron Gas System (2DEG)
Two Dimensional Hole Gas System (2DHG)
Phonon Scattering
Carrier Temperature Model
Carrier Heating
Electrodynamics
Online Access:http://hdl.handle.net/2005/294

Internet

http://hdl.handle.net/2005/294

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