Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials

Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials

Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology. Hafnium dioxide (HfO2) is the most promising high-κ material because of its excellent chemical, ther...

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Bibliographic Details
Main Author: Ganapathi, K Lakshmi
Other Authors: Mohan, S
Language:en_US
Published: 2018
Subjects:
Hafnium Dioxide Thin Films
Complementary Metal-Oxide Semiconductors (CMOS)
Two-Dimensional Layered Materials - Gate Dielectrics
High-K Materials
Gate Dielectric
High-K Gate Dielectric
Nanoelectronic Devices - Gate Dielectrics
HfO2 Gate Dielectrics
Dielectric Thin Films
HfO2 Back Gated Graphene Transistors
HfO2 Back Gated MoS2 Transistors
Dielectrics
Metal-Oxide Semiconductor Transistors
HfO2 Thin Films
2-D lLyered Materials
Instrumentation and Applied Physics
Online Access:http://hdl.handle.net/2005/3219
http://etd.ncsi.iisc.ernet.in/abstracts/4081/G26584-Abs.pdf

Internet

http://hdl.handle.net/2005/3219
http://etd.ncsi.iisc.ernet.in/abstracts/4081/G26584-Abs.pdf

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