Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective

Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective

Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-s...

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Bibliographic Details
Main Author: Ray, Biswajit
Other Authors: Mahapatra, Santanu
Language:en_US
Published: 2010
Subjects:
Transistors (Electronics)
Electrostatics
Transistors - Modeling
Gate-All-Around (GAA) Transistor
Double Gate Transistor
Omega Gate Nanowire Transistor
Metal Oxide Semiconductor Field Effect Transistors(MOSFET)
Undoped Body Multi Gate Transistor
Electronic Engineering
Online Access:http://hdl.handle.net/2005/741

Internet

http://hdl.handle.net/2005/741

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