Electrical characteristics of gallium nitride and silicon based metal-oxide-semiconductor (MOS) capacitors
Doctor of Philosophy === Department of Chemical Engineering === James H. Edgar === The integration of high-κ dielectrics with silicon and III-V semiconductors is important due to the need for high speed and high power electronic devices. The purpose of this research was to find the best conditions f...
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| Language: | en_US |
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Kansas State University
2013
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| Online Access: | http://hdl.handle.net/2097/16942 |