Epitaxy of boron phosphide on AIN, 4H-SiC, 3C-SiC and ZrB₂ substrates
Doctor of Philosophy === Department of Chemical Engineering === James H. Edgar === The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP...
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| Language: | en_US |
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Kansas State University
2016
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| Online Access: | http://hdl.handle.net/2097/32808 |