Netiesinė difuzija sužadintuose silicio kristaluose
This work analyses the phenomenon of diffusion in crystalline Si. Basic diffusion mechanisms and equations are described in the basic diffusion characteristics (diffusion coefficient, electrical conductivity and the concentration of vacancies) are analyzed by means of vacancies, what are generated b...
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| Format: | Dissertation |
| Language: | Lithuanian |
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Lithuanian Academic Libraries Network (LABT)
2005
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| Online Access: | http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2005~D_20050608_083433-78958/DS.005.0.01.ETD |