Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN

Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN

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Investigations made on new materials and their structures for production of particle detectors based on semi-insulating SiC and GaN comprise the technological and applied importance of this study. Innovations in defect control technology, especially, in recognition of extended defects and percolativ...

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Bibliographic Details
Main Author: Kalendra, Vidmantas
Other Authors: Tamulaitis, Gintautas
Format: Doctoral Thesis
Language:English
Published: Lithuanian Academic Libraries Network (LABT) 2009
Subjects:
Physics
Si
SiC
GaN
Defects
Defektai
Online Access:http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2009~D_20091215_091727-69995/DS.005.1.01.ETD

Internet

http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2009~D_20091215_091727-69995/DS.005.1.01.ETD

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